C4633 PDF Datasheet

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Description

:

NPN Triple Diffused Planar Silicon Transistor

Features :

1. High breakdown voltage ( V ceo min = 1200V)

2. Small Cob ( Typical Cob = 2.0pF)

3. Full-isolation package.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 1500 V

2. Collector to Emitter Voltage : Vceo = 1200 V

3. Emitter to Base Voltage : Vebo = 5 V

4. Collector Current : Ic = 30 mA

5. Total Dissipation : Pc =2 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C