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Description

1. High fT : fT=400MHz (typ).

2. High breakdown voltage : VCEO > 250V(min).

3. High current.

4. Small reverse transfer capacitance and excellent high-frequnecy characteristic :

Cre=3.4pF (NPN), 4.2pF (PNP).

5. Complementary pair with the 2SA1777/2SC4623.

6. Adoption of FBET process.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 250 V

2. Collector to Emitter Voltage : Vceo = 250 V

3. Emitter to Base Voltage : Vebo = 3 V

4. Collector Current : Ic = 300 mA

5. Total Dissipation : Pc = 1.3 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications :

Very High-Definition CRT Display Video Output