Description:NPN Epitaxial Planar Silicon Transistor Features : 1. Fast switching speed. Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = 40 V 2. Collector to Emitter Voltage : Vceo = 40 V 3. Emitter to Base Voltage : Vebo = 15 V 4. Collector Current : Ic = 200 mA 5. Total Dissipation : Pc = 150 mW 6. Junction Temperature : Tj = 150°C
1. High-Speed Switching |
Related Part Number |
C4D08120E | C4977 C4927 | C4860 C4834 | C4793 |