Description:NPN Triple Diffused Planar Silicon Transistor Features : 1. High breakdown voltage, high reliability. Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = 500 V 2. Collector to Emitter Voltage : Vceo = 400 V 3. Emitter to Base Voltage : Vebo = 7 V 4. Collector Current : Ic = 25 A 5. Total Dissipation : Pc = 3 W 6. Junction Temperature : Tj = 150°C
7. Storage Temperatue : Tsg = -55 ~ +150°C |
Related Part Number |
C4D08120E | C4977 C4927 | C4860 C4834 | C4793 |