Description:NPN triple diffused planar silicon transistor 1. High breakdown voltage (VCEO≥300V).
Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = 300 V 2. Collector to Emitter Voltage : Vceo = 300 V 3. Emitter to Base Voltage : Vebo = 6 V 4. Collector Current : Ic = 200 mA 5. Total Dissipation : Pc = 1.5 W 6. Junction Temperature : Tj = 150°C 7. Storage Temperatue : Tsg = -55 ~ +150°C Application : Color TV chroma output, sound output, B/W TV video output |
Related Part Number |
C4D08120E | C4977 C4927 | C4860 C4834 | C4793 |