Description:Silicon NPN Epitaxial Type Transistor (PCT Process) Features : 1. 27Mhz RF Power Amplifier Applications 2. Recomended for 1W Mobile Radio Output Stage and Driver Stage of 4W Transmitter. Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = 80 V 2. Collector to Emitter Voltage : Vceo = 80 V 3. Emitter to Base Voltage : Vebo = 5 V 4. Collector Current : Ic = 1 A 5. Total Dissipation : Pc = 1 W 6. Junction Temperature : Tj = 150°C
7. Storage Temperatue : Tsg = -55 ~ +150°C
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Related Part Number |
C2960 | C2938 C2752 | C2655 C2625 | C2610 |