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Description

2SC1970, C1970 is a silicon NPN epitaxial planar transistor designed for RF power amplifiers on VHF band mobile radio applications.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 40 V

2. Collector to Emitter Voltage : Vceo = 17 V

3. Emitter to Base Voltage : Vebo = 4 V

4. Collector Current : Ic = 0.6 A

5. Total Dissipation : Pc = 1 W 

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Test Circuit