Description:Silicon NPN epitaxial planar type Transistor
Features : 1. Low collector-emitter saturation voltage VCE(sat) 2. Complementary pair with 2SA0683, 2SA0684 3. For low-frequency power amplification and driver amplification 4. Complementary to 2SA0683, 2SA0684 Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = 60 V 2. Collector to Emitter Voltage : Vceo = 50 V 3. Emitter to Base Voltage : Vebo = 5 v 4. Collector Current : Ic = 1 A 5. Total Dissipation : Pc = 1 W 6. Junction Temperature : Tj = 150°C
7. Storage Temperatue : Tsg = -55 ~ +150°C
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Related Part Number |
C1970 | C1740 C1675 | C1623 C1384 | C1345 |