Description:Silicon NPN Epitaxial Transistor Applications : Low frequency low noise amplifier Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = 55 V 2. Collector to Emitter Voltage : Vceo = 50 V 3. Emitter to Base Voltage : Vebo = 5 V 4. Collector Current : Ic = 100 mA 5. Total Dissipation : Pc = 200 mW 6. Junction Temperature : Tj = 150°C 7. Storage Temperatue : Tsg = -55 ~ +150°C
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Related Part Number |
C1970 | C1740 C1675 | C1623 C1384 | C1345 |