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NXP Semiconductors
BLW86
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
DistributorStock110100Link
Aztech5,89850.99Visit Site
Run Hong Electronics9,802131.1856Visit Site
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Description

:

The ASI BLW86 is Designed for Class C, 28 V High Band Applications up to 175 MHz.

 

FEATURES:

• Common Emitter
• PG= 7.0 dB at 40 W/175 MHz
• Omnigold™ Metalization System

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 65 V

2. Collector to Emitter Voltage : Vceo = 35 V

3. Emitter to Base Voltage : Vebo = 4 V

4. Collector Current : Ic = 5 A

5. Total Dissipation : Pc = 60 W

6. Junction Temperature : Tj = 200°C

 

7. Storage Temperatue : Tsg = -65 ~ +150°C



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