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Description

80 W LDMOS transistor for base station applications at frequencies from 1800 MHz to 2200 MHz.

Pinouts : 

Features 

1. Designed for broadband operation (1800 MHz to 2200 MHz)

2. Excellent ruggedness

3. High efficiency

4. Excellent thermal stability

5. Internally matched for ease of use

6. High power gain

7. Integrated ESD protection

8. Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS)

Applications

1. RF power amplifiers for base station and multi-carrier applications in the 1800 MHz to

2200 MHz frequency range

Description

80 W LDMOS transistor for base station applications at frequencies from 1800 MHz to 2200 MHz.

Pinouts : 

Features 

1. Designed for broadband operation (1800 MHz to 2200 MHz)

2. Excellent ruggedness

3. High efficiency

4. Excellent thermal stability

5. Internally matched for ease of use

6. High power gain

7. Integrated ESD protection

8. Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS)

Applications

1. RF power amplifiers for base station and multi-carrier applications in the 1800 MHz to

2200 MHz frequency range