Description:Silicon NPN power transistor Features : • Total Switching Time at 3 A typically 1.15 µs
1. Collector to Base Voltage : Vcbo = 80 V 2. Collector to Emitter Voltage : Vceo = 100 V 3. Emitter to Base Voltage : Vebo = 7 V 4. Collector Current : Ic = 10 A 5. Total Dissipation : Pc = 150 W 6. Junction Temperature : Tj = 200°C 7. Storage Temperatue : Tsg = -65 ~ +200°C Applications : 1. Medium–speed switching 2. Amplifier |
Related Part Number |
2NT1-2 | 2N930 2N7002T | 2N7002P 2N7002LT1 | 2N7002KW |