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NTE Electronics
2N3714
Transistor NPN Silicon Bvceo=80V IC=10A TO-3 Case Audio Power AMP And Switch

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Description

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The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N3715, and 2N3716 are silicon NPN power transistors manufactured by the epitaxial-base process, mounted in a hermetically sealed metal package designed for medium speed switching and amplifier applications.

 

Absolute maximum ratings ( Ta=25°C )
 
1. Collector to Base Voltage : Vcbo = 100 V
2. Collector to Emitter Voltage : Vceo = 80 V
3. Emitter to Base Voltage : Vebo = 7 V
4. Collector Current : Ic = 10 A
5. Total Dissipation : PD = 150 W
6. Junction Temperature : Tj = 200°C
7. Storage Temperatue : Tsg = -65 ~ +200°C



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