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Microchip
2N3440
Power Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin

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Description

:

These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators.

Features :  

 
1. DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR

2. HIGH VOLTAGE

  

Absolute maximum ratings ( Ta=25°C )
 
1. Collector to Base Voltage : Vcbo = 300 V
2. Collector to Emitter Voltage : Vceo = 250 V
3. Emitter to Base Voltage : Vebo = 7 V
4. Collector Current : Ic = 1 A
5. Total Dissipation : Pc = 5 W
6. Junction Temperature : Tj = 200°C
7. Storage Temperatue : Tsg = -65 ~ +200°C




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