Part Number : K3567
Function : 600V, 3.5A, N-channel, MOSFET
Package : TO-220 Type
Maker : Toshiba
Image : 
Description :
Silicon N Channel MOS Type Field Effect Transistor
Features :
1. Low drain-source ON resistance: RDS (ON)= 1.7 Ω(typ.)
2. High forward transfer admittance: |Yfs| = 2.5 S (typ.)
3. Low leakage current: IDSS= 100 μA (max) (VDS= 600 V)
4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 3.5 A
4. Drain Power Dissipation : Pd = 35 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Pinout
Datasheet PDF Download : 
Others datasheet of same file : 2SK3567
