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Toshiba
YTA630
Power Field-Effect Transistor, 10A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...

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Description

:

1. Low Drain-Source On Resistance  : Rds(on) = 0.26Ohm(Typ.)

2. High Forward Transfer Admittance : | Yfs | = 8S(Typ.)

3. Low Leakage Current : Idss = 100uA (Max.) (Vds = 200V)

4. Enhancement-Mode : Vth = 1.5 ~ 3.5V (Vds =10V, Id = 1mA)

 

Applications : 

1. High Speed, High Voltage Switching

2. Switching Regulator, DC-DC converter and motor driver

 



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YTF830  |  YTA630  


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