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STMicroelectronics
VNP35N07FI
Power Field-Effect Transistor, 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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Description

:

The VNP35N07FI, VNB35N07 and VNV35N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation  and overvoltage clamp protect the chip in harsh enviroments.

Featues

1. LINEAR CURRENT LIMITATION
2. THERMAL SHUT DOWN
3. SHORT CIRCUIT PROTECTION
4. INTEGRATED CLAMP
5. LOW CURRENT DRAWN FROM INPUT PIN
6. DIAGNOSTIC FEEDBACK THROUGH INPUT PIN
7. ESD PROTECTION
8. DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING)



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