Description:The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 1. RDS(ON)<1.5Ω @ VGS=10V 2. Single Pulse Avalanche Energy Rated 3. Rugged- SOA is Power Dissipation Limited 4. Fast Switching Speeds 5. Linear Transfer Characteristics 6. High Input Impedance |
Related Part Number |
UFT-1 | UFR3150 UFG110 | UF880 UF870 | UF830 |