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Description

NPN triple diffusion planar type silicon transistor

Features : 

1. High speed.

2. High-voltage (VCBO = 1500V).

3. High reliability (HVP process adopted).

4. Adoption of MBIT process.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 1500 V

2. Collector to Emitter Voltage : Vceo = 800 V

3. Emitter to Base Voltage : Vebo = 5 V

4. Collector Current : Ic = 8 A

5. Total Dissipation : Pc = 65 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications : 

CRT display for horizontal deflection output