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Description

Designed for general−purpose amplifier and low frequency switching applications.

Features

• High DC Current Gain − Min hFE = 1000 @ Ic = 5.0 A, Vce= 4 V
 

• Collector−Emitter Sustaining Voltage −@ 30 mA
    Vceo(sus)
    = 60 Vdc (Min) −TIP140, TIP145
    = 80 Vdc (Min) −TIP141, TIP146
    = 100 Vdc (Min) −TIP142, TIP147

• Monolithic Construction with Built−In Base−Emitter Shunt Resistor

• These are Pb−Free Devices

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 60 V

2. Collector to Emitter Voltage : Vceo = 60 V

3. Emitter to Base Voltage : Vebo = 5 V

4. Collector Current : Ic = 10 A

5. Total Dissipation : Pc = 125 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C