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PDF TIM1414-4LA Download

Toshiba
TIM1414-4LA
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

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Description

: 

1. High Power : P1dB=36.5dBm at 14.0Ghz to 14.5Ghz

2. High Gain : G1dB=6.5dB at 14.0Ghz to 14.5Ghz

3. Broad Band Internally Matched FET

4. Hermetically Sealed Package


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