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Description

• Planar HD3e Process for Fast Switching Performance

• Low RDS(on) to Minimize Conduction Loss

• Low Ciss to Minimize Driver Loss

• Low Gate Charge

• Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters

• These are Pb−Free Devices


Absolute Maximum Ratings (Ta = 25°C)

1. Drain−to−Source Voltage : Vdss = 25 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 45 A