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Fairchild Semiconductor
SSP7N60B
Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...

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Description

:

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features

• 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V

• Low gate charge ( typical 38 nC)

• Low Crss ( typical 23 pF)

• Fast switching

• 100% avalanche tested

 

• Improved dv/dt capability



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Related Part Number


SSY1920  |  SSTV16859  

SSTV16857  |  SST-50  

SSP7N60B  |  SSL6203TW  


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