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Description

The R1LV1616H-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit / 2-Mword × 8-bit. R1LV1616H-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in 48-pin plastic TSOPI for high density surface mounting.

Features

• Single 3.0 V supply: 2.7 V to 3.6 V
• Fast access time: 45/55 ns (max)

• Power dissipation:
 (1) Active: 9 mW/MHz (typ)
 (2) Standby: 1.5 μW (typ)

• Completely static memory.
 (1) No clock or timing strobe required
• Equal access and cycle times

• Common data input and output.
 (1) Three state output

• Battery backup operation.
 (1) 2 chip selection for battery backup