PDF PSMN3R0-30YLD Download

Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.

NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current.

NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.


Features

• Low spiking and ringing for low EMI designs

• Unique “SchottkyPlus” technology; Schottky-like performance with < 1 μA leakage at 25 °C

• Optimised for 4.5 V gate drive

• Low parasitic inductance and resistance

Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.

NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current.

NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.


Features

• Low spiking and ringing for low EMI designs

• Unique “SchottkyPlus” technology; Schottky-like performance with < 1 μA leakage at 25 °C

• Optimised for 4.5 V gate drive

• Low parasitic inductance and resistance