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Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.

NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current.

NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Features :

1. Superfast switching with soft-recovery; s-factor > 1

2. Low spiking and ringing for low EMI designs

3. Optimised for 4.5 V gate drive

4. Low parasitic inductance and resistance

Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.

NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current.

NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Features :

1. Superfast switching with soft-recovery; s-factor > 1

2. Low spiking and ringing for low EMI designs

3. Optimised for 4.5 V gate drive

4. Low parasitic inductance and resistance