PDF NDS351AN Download

Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Features

1. Industry standard outline SOT-23 surface mount package

2. High density cell design for extremely low RDS(ON).

3. Exceptional on-resistance and maximum DC current capability.