Description:Totally depleted ion implanted structures. Micron Semiconductor’s ultra low leakage currents and thin entrance window couples with fast response from total depletion with over voltage capability permits a wide range of applications for these single area detectors. For example, High Energy Physics, Fission Fragments Detection, Room Temperature X-ray Detection, Gamma Transient Detection, Heavy Ion Physics and Nuclear Structure Physics. MSX060 40.0 x 15.0 43.0 x 18.0 2/7/9 M/T/P 2M 4 MGR Chip Only |
Related Part Number |
MSX060 | MST99A88ML MST703 | MSP430P325AIPG MSP430G2553 | MSP430G2533IRHB32 |