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Totally depleted ion implanted structures.

Micron Semiconductor’s ultra low leakage currents and thin entrance window couples with fast response from total depletion with over voltage capability permits a wide range of applications for these single area detectors. For example, High Energy Physics, Fission Fragments Detection, Room Temperature X-ray Detection, Gamma Transient Detection, Heavy Ion Physics and Nuclear Structure Physics.

MSX060  40.0 x 15.0  43.0 x 18.0  2/7/9 M/T/P  2M  4  MGR  Chip Only



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Related Part Number


MSX060  |  MST99A88ML  

MST703  |  MSP430P325AIPG  

MSP430G2553  |  MSP430G2533IRHB32  


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