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Description

1. The integration of high-voltage power MOSFET and CMOS control circuit, Significant reduction of used parts is achieved

2. New control such as to reduce the number of oscillations enough to be at light load By method, it significantly reduces the switching losses at light loads, And achieve low power consumption

3. the current consumption of the IPD built-in control circuit portion is reduced to 150 μA, IPD
Even as much as possible to reduce power consumption of its own

4. Pulse-by-pulse overcurrent protection as a protective function, overheating protection Built-in

 Pinout