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PDF MG800J1US51 Download

Toshiba
MG800J1US51
Insulated Gate Bipolar Transistor, 800A I(C), 600V V(BR)CES, N-Channel

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Description

:

1. The Electrodes are Isolated from Case

2. High Input Impedance 

3. Enhancement-Mode

4. High Speed

5. Low Saturation Voltage


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Related Part Number


MGN61317  |  MG800J1US51  

MG400J2YS50  |  

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