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Toshiba
MG400J2YS50
Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel

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Description

:

1. 400A 600V, TRANSISTOR, IGBT MODULE.

2. N-Channel, 600V, 400A,

3. N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Applications : 

1. The Electrodes are Isolated from Case

2. High Input Impedance

3. Includes a complete Half Bridge in One package .



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MGN61317  |  MG800J1US51  

MG400J2YS50  |  

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