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ME12P04
P¡ªchannel, -40V, -65A, Rds(on), 10M¦¸@10V, 13M¦¸@4.5V, 20VGS(¡ÀV), -1.6VTH(V) , TO252
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Description

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The ME12P04 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

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Related Part Number


MEW1023  |  MEV3S0509SC  

MES1206  |  MEM2012T25R0T0S1  

ME9435  |  ME12P04  


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