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MBRS3200T3G
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AA
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Description

:

Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters. This device offers a low forward voltage performance in a power surface mount package in applications where size and weight are critical.

 

 Features

1. Compact surface mount with J-bend leads (SMC)
2. 3.0 Watt Power Dissipation package
3. 3.0 Ampere, forward voltage less than 500 mV



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