Description:
The M29W400, M29W400B is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Word by-Wordbasis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.
The array matrix organisation allows each block to be erased and reprogrammed without affecting
other blocks. Blocks can be protected against programing and erase on programming equipment,
and temporarily unprotected to make changes in the application. Each block can be programmed
and erased over 100,000 cycles. Instructions for Read/Reset, Auto Select for reading the Electronic Signature or Block Protection status, Programming, Block and Chip Erase, Erase
Suspend and Resume are written to the device in cycles of commands to a CommandInterfaceusing standard microprocessor write timings.The device is offered in TSOP48 (12 x 20mm),SO44 and FBGA48 (8 x 6 balls, 0.8mm pitch) packages. Both normal and reverse pinouts are available for the TSOP48 package.
Features :
• 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATION
• FAST ACCESS TIME: 90ns
• FAST PROGRAMMING TIME
–10µs by Byte / 16µs by Word typical
• PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte or Word-by-Word
– Status Register bits and Ready/Busy Outpu
• MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
• BLOCK, MULTI-BLOCK and CHIP ERASE
• MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES
• ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend
• LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
• 100,000 PROGRAM/ERASE CYCLES per BLOCK
• 20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
• ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code, M29W400T: 00EEh
– Device Code, M29W400B: 00EFh
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Datasheet