Description:N-CHANNEL MOSFET Features : 1. Low drain−source ON resistance : RDS (ON)= 4.5 mΩ(typ.) 2. High forward transfer admittance : |Yfs| = 70 S (typ.) 3. Low leakage current : IDSS= 100 µA (max) (VDS= 60 V) 4. Enhancement−mode : Vth= 1.3~2.5 V (VDS= 10 V, ID= 1mA)
1. HIGH SPEED 2. HIGH VOLTAGE SWITCHING 3.CHOPPER REGULATOR 4. DC-DC CONVERTER 5. RELAY DRIVE AND MOTOR DRIVE 6. DC−DC Converter, Relay Drive and Motor Drive
Absolute Maximum Ratings (Ta = 25°C) 1. Drain to source voltage : VDSS = 60 V 2. Gate to source voltage : VGSS = ± 20 V 3. Drain current : ID = 45 A 4. Drain Power Dissipation : Pd = 45 W 5. Channel temperature : Tch = 150 °C 6. Storage temperature : Tstg = -55 to +150 °C |
Related Part Number |
K2996 | K2985 K2983 | K2959 K2957 | K2956 |