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Description

This product is N-Channel MOS Field Effect Transistor designed for high current switching application.

Features : 

 • Low on-resistance
  (1)  RDS(on)1= 20 mΩ (MAX.) (VGS= 10 V, ID= 15 A)
  (2)  RDS(on)2= 27 mΩ (MAX.) (VGS= 4.5 V, ID= 15 A)

• Low Ciss   Ciss= 1200 pF TYP.

• Built-in gate protection diode

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 30 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID =  30 A

4. Total Power Dissipation : Pd = 1.5 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications :

SWITCHINGN-CHANNEL POWER MOS FET INDUSTRIAL USE

2SK2983 TO-220AB, 2SK2983-S TO-262, 2SK2983-ZJ TO-263

Description

This product is N-Channel MOS Field Effect Transistor designed for high current switching application.

Features : 

 • Low on-resistance
  (1)  RDS(on)1= 20 mΩ (MAX.) (VGS= 10 V, ID= 15 A)
  (2)  RDS(on)2= 27 mΩ (MAX.) (VGS= 4.5 V, ID= 15 A)

• Low Ciss   Ciss= 1200 pF TYP.

• Built-in gate protection diode

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 30 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID =  30 A

4. Total Power Dissipation : Pd = 1.5 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications :

SWITCHINGN-CHANNEL POWER MOS FET INDUSTRIAL USE

2SK2983 TO-220AB, 2SK2983-S TO-262, 2SK2983-ZJ TO-263