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Description

Features

•  Low on-resistance  RDS(on)= 7mΩ typ.

•  4V gate drive devices.

•  High speed switching

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 30 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 50 A 

4. Channel dissipation : Pch = 75 W

5. Channel temperature : Tch =  150 °C 

6. Storage temperature : Tstg = -55 to +150 °C

Applications : 

High Speed Power Switching