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VBsemi

K2957S-VB

N, 30V, 70A, Rds(on), 8.4M¦¸@4.5V, 10M¦¸@2.5V, 20VGS(¡ÀV), 0.8~2.0VTH(V) , TO263 , Led

Description

:

Silicon N Channel MOSFET

Features :

1. Low on-resistance RDS(on)= 7mW typ.

2. 4V gate drive devices.

3. High speed switching

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 30 V

2. Gate to source voltage : VGSS = 20 V

3. Drain current : ID = 50 A

4. Drain power dissipation : PD = 75 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Please enter the part number.

K2996  |  K2985

K2983  |  K2959

K2957  |  K2956

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