Description:Silicon N Channel MOSFET Features : • Low on-resistance : RDS=0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Absolute Maximum Ratings (Ta = 25°C) 1. Drain to source voltage : VDSS = 60 V 2. Gate to source voltage : VGSS = ± 20 V 3. Drain current : ID = 25 A 4. Channel dissipation : Pch = 50 W 5. Channel temperature : Tch = 150 °C 6. Storage temperature : Tstg = -55 to +150 °C Applications : High Speed Power Switching Description:Silicon N Channel MOSFET Features : • Low on-resistance : RDS=0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Absolute Maximum Ratings (Ta = 25°C) 1. Drain to source voltage : VDSS = 60 V 2. Gate to source voltage : VGSS = ± 20 V 3. Drain current : ID = 25 A 4. Channel dissipation : Pch = 50 W 5. Channel temperature : Tch = 150 °C 6. Storage temperature : Tstg = -55 to +150 °C Applications : High Speed Power Switching |
Related Part Number |
K2996 | K2985 K2983 | K2959 K2957 | K2956 |