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2SK2850-01
N-Channel Enhancement Mode Power MOSFET / Trans MOSFET N-CH Si 900V 6A 3-Pin(3+Tab) TO-3P

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Description

:

N-Channel enhancement mode power MOSFET

Absolute maximum ratings ( Ta=25°C )

1. Drain-Source Volage : Vds = 900 V

2. Continuous Drain Current : Id = ± 6 A

3. Maximum Avalache Engergy : Eav = 277 mJ

4. Maximum Power Dissipation : Pd = 125 W

Pinouts : 



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Related Part Number


K2996  |  K2985  

K2983  |  K2959  

K2957  |  K2956  


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