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Description

Silicon N Channel MOSFET 

Features : 

•  Low on-resistance : RDS(on)= 15 mΩ typ.

•  High speed switching

•  Low drive current

•  4V gate drive device can be driven from 5V source

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 60 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 40 A 

4. Channel dissipation : Pch = 50 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications : 

1. High Speed Power Switching

Description

Silicon N Channel MOSFET 

Features : 

•  Low on-resistance : RDS(on)= 15 mΩ typ.

•  High speed switching

•  Low drive current

•  4V gate drive device can be driven from 5V source

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 60 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 40 A 

4. Channel dissipation : Pch = 50 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications : 

1. High Speed Power Switching