K2725 PDF Datasheet

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Description

:

Silicon N Channel MOS FET

Features :

• Low on-resistance

• High speed switching

• Low drive current

• No secondary breakdown

• Avalanche ratings

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 500 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 5 A

4. Channel dissipation : Pch = 30 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications :

High Speed Power Switching