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Description

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE, 
This product is N-Channel MOS Field effect transistor designed for high current switching applications.

Features : 

1. Low On-Resistance

 (1) RDS (on) 1 = 40mW Max. (VGS = 10 V, ID = 13 A)

 (2) RDS (on) 2 = 60mW Max. (VGS = 4 V, ID = 13 A)

2. Low Ciss Ciss = 830 pF Typ.

3. Built-in G-S Protection Diode

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 60 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 25 A

4. Total Power Dissipation : Pd = 2 W

5. Channel temperature : Tch =  150 °C 

6. Storage temperature : Tstg = -55 to +150 °C

Description

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE, 
This product is N-Channel MOS Field effect transistor designed for high current switching applications.

Features : 

1. Low On-Resistance

 (1) RDS (on) 1 = 40mW Max. (VGS = 10 V, ID = 13 A)

 (2) RDS (on) 2 = 60mW Max. (VGS = 4 V, ID = 13 A)

2. Low Ciss Ciss = 830 pF Typ.

3. Built-in G-S Protection Diode

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 60 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 25 A

4. Total Power Dissipation : Pd = 2 W

5. Channel temperature : Tch =  150 °C 

6. Storage temperature : Tstg = -55 to +150 °C