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Description

This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supplies.

Features

1. Low drain−source ON-resistance : RDS (ON) = 1.2 Ω (typ.)

2. High forward transfer admittance : |Yfs| = 7.0 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)

4. Enhancement−mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)