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Description

:

Silicon N-Channel MOSFET

Features : 

•  Low on-resistance

•  High speed switching

•  Low drive current

•  Suitable for switching regulator and DC-DC converter

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 500 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 12 A

4. Channel dissipation : Pch = 100 W

5. Channel temperature : Tch =  150 °C 

6. Storage temperature : Tstg = -55 to +150 °C


Application
1. High speed power switching


Description

:

Silicon N-Channel MOSFET

Features : 

•  Low on-resistance

•  High speed switching

•  Low drive current

•  Suitable for switching regulator and DC-DC converter

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 500 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 12 A

4. Channel dissipation : Pch = 100 W

5. Channel temperature : Tch =  150 °C 

6. Storage temperature : Tstg = -55 to +150 °C


Application
1. High speed power switching



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Related Part Number


K2996  |  K2985  

K2983  |  K2959  

K2957  |  K2956  


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