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Description

The K2481 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

Features

• Low On-Resistance : RDS(on) = 4.0 W (VGS = 10 V, ID = 2.0 A)

• Low Ciss Ciss = 900 pF TYP. 

• High Avalanche Capability Ratings

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 900 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 4 A

4. Channel dissipation : Pch = 1.5W

5. Channel temperature : Tch =  150 °C 

6. Storage temperature : Tstg = -55 to +150 °C