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Description

The K2411 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.

FEATURES

• Low On-Resistance

(1) RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A)

(2) RDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A)

• Low Ciss Ciss = 1500 pF TYP.

• Built-in G-S Gate Protection Diodes

• High Avalanche Capability Ratings

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 60 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 30 A

4. Total Power Dissipation : Pd = 1.5 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C