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Mersen
K222120
D Fuse System, D Touch Protection Ring, Size Dii
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Description

:

Silicon N Channel MOSFET

Features : 

•  High power gain

• Excellent frequency response

• High speed switching

• Wide area of safe operation

• Enhancement–mode

• Good complementary characteristics

• Equipped with gate protection diodes


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 200 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 8 A 

4. Channel dissipation : Pch = 100 W

5. Channel temperature : Tch =  150 °C 

6. Storage temperature : Tstg = -55 to +150 °C



 

Applications 

1. Low frequency power amplifier

2. Complementary pair with 2SJ351, 2SJ352


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Related Part Number


K2996  |  K2985  

K2983  |  K2959  

K2957  |  K2956  


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