Description:Silicon N Channel MOSFET Features : • High power gain Absolute Maximum Ratings (Ta = 25°C) 1. Drain to source voltage : VDSS = 200 V 2. Gate to source voltage : VGSS = ± 20 V 3. Drain current : ID = 8 A 4. Channel dissipation : Pch = 100 W 5. Channel temperature : Tch = 150 °C 6. Storage temperature : Tstg = -55 to +150 °C
Applications 1. Low frequency power amplifier 2. Complementary pair with 2SJ351, 2SJ352 |
Related Part Number |
K2996 | K2985 K2983 | K2959 K2957 | K2956 |