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PDF K2134 Download

NEC
2SK2134
Power Field-Effect Transistor, 13A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
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Description

:

The K2134, 2SK2134, 2SK2134-Z are N-channel Power MOS Field Effect Transistor designed for hig voltage switching applicaions.

 

Pinout



Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 200 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 3 A

4. Total Power Dissipation : Pd = 1.5 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C


Applications

1. High voltage switching 


Description

:

The K2134, 2SK2134, 2SK2134-Z are N-channel Power MOS Field Effect Transistor designed for hig voltage switching applicaions.

 

Pinout



Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 200 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 3 A

4. Total Power Dissipation : Pd = 1.5 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C


Applications

1. High voltage switching 



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Related Part Number


K2996  |  K2985  

K2983  |  K2959  

K2957  |  K2956  


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