Description:Silicon N-Channel MOSFET Features : • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter Absolute Maximum Ratings (Ta = 25°C) 1. Drain to source voltage : VDSS = 100 V 2. Gate to source voltage : VGSS = ± 20 V 3. Drain current : ID = 1 A 4. Channel dissipation : Pch = 0.9 W 5. Channel temperature : Tch = 150 °C 6. Storage temperature : Tstg = -55 to +150 °C |
Related Part Number |
K2996 | K2985 K2983 | K2959 K2957 | K2956 |